Semtech corporation, 2n5551, npn silicon expitaxial planar transistor for general. High voltage switching transistor, 2n5551 datasheet, 2n5551 circuit, 2n5551 data sheet. Kst904 1 2n5551 npn silicon transistor descriptions general purpose amplifier high voltage application features high collector breakdown voltage. Ic cross reference cross reference ci stk cross reference ci tda cross reference ci sharp cross reference hitachi audio ic cross reference and circuit applications smd cross reference and equivalent we make every effort to ensure that the material on this site is accurate, however we do not warrant or represent that the information is free. Dccom technical specifications of npn epitaxial planar transistor,alldatasheet, datasheet, datasheet search site for electronic components and semiconductors. Amplifier transistors 2n5550 2n5551 datasheet catalog. Vceo160v high current gain applications telephone switching circuit amplifier ordering information ordering number pin assignment package packing lead free plating halogen free 1 2 3 2n5551lx. This device is designed for general purpose high voltage amplifiers and gas discharge display drivers symbol v ceo v cbo v ebo pc tj tstg symbol rating collectoremitter voltage collectorbase voltage emitterbase voltage collector. Free devices maximum ratings rating symbol value unit collector. Semiconductor transistor, diode, ic cross reference.
It does not check as datahseet good pnp transistor using the dvm and i dont have access to a curve. Npn silicon expitaxial planar transistor for general purpose, high voltage amplifier applications, 2n5551 datasheet, 2n5551 circuit, 2n5551 data sheet. Complementary low voltage transistor features products are preselected in dc current gain application general purpose description these epitaxial planar transistors are mounted in the sot32 plastic package. Transistor type current collector ic max voltage collector emitter breakdown max. Download datasheets and manufacturer documentation for on semiconductor 2n5551. Description mplifier transistorsnpn silicon download 6 pages. Emitter voltage 2n5550 2n5551 vceo 140 160 vdc collector. It also has decent switching characteristics so can amplify lowlevel signals.
All 2n5551 2n5551 to92 2n5401 application transistor 2n5551 2n5401 2n5551 transistor transistor to92 2n5401 text. Package specifications do not expand the terms of fairchilds. Electronic manufacturer, part no, datasheet, electronics description. Maximum ratings are those values beyond which device damage can occur. Onsemi, alldatasheet, datasheet, datasheet search site for electronic components and semiconductors, integrated circuits, diodes, triacs, and other semiconductors. See detailed ordering and shipping information in the package. The product status of devices described in this document may have changed since this document. Small signal transistor, to71 from old datasheet system. Specifications may change in any manner without notice. Please consult the most recently issued data sheet before initiating or completing a design. B 2n5551 mmbt5551 npn ge neral purpose amplifier tm april 2006 2n5551 mmbt5551 npn general purpose amplifier features this device is designed for general purpose high voltage amplifiers and gas discharge display drivers. This bipolar junction transistors maximum emitter base voltage is 6 v. A transistor is normally a current amplifier, meaning the current flowing 2m5551 the base will be amplified. H absolute maximum ratings ta25 c, unless otherwise specified parameter symbol ratings unit collectorbase voltage vcbo 180 v collectoremitter voltage vceo 160 v emitterbase voltage vebo 6 v to92 625 mw.
Vcbo 180v, vceo 160v low collector saturation voltage. The 2n5551 is a 160v npn bipolar transistor capable of 625mw power dissipation and 600ma collector current. Semiconductor data sheets andor specifications can and do vary in different applications and. Auk corp, 2n5551, npn silicon transistor general purpose amplifier high. Small signal transistors smv diodes marking codes free. Product compliance certificate download product compliance certificate. The product status of the devices described in this data sheet may have changed since this data sheet was published. The 2n5551 is an npn amplifier transistor with an amplification factor hfe of 80 when the collector current is 10ma.
Download 2n5551 2n5551rlra 2n5551rlrm 2n5551rlrp 2n55551zl1. Click here specifications bipolar transistor transistor polarity. Base voltage 2n5550 2n5551 vcbo 160 180 vdc emitter. They are designed for audio amplifiers and drivers utilizing complementary or quasicomplementary circuits. Suffix y means hfe 180240 in 2n5551 test condition. B1 1 june 2009 2n5551 mmbt5551 npn general purpose amplifier features this device is designed for general purpose high voltage amplifiers and gas discharge display drivers. This device is designed for general purpose high voltage amplifiers and gas discharge display drivers. Due to this feature, the transistor is commonly used for amplification of audio or other low power signals. A very simple bare minimum circuit for a transistor to work as an amplifier is shown below. The 2n5551 from fairchild is a through hole, npn general purpose amplifier in to92 package. Preferred devices are recommended choices for future use and best overall value. Semiconductortransistor crossreference list peavey. Vceo160v high current gain applications telephone switching circuit amplifier ordering information ordering number pin assignment package packing lead free. Motorola smallsignal transistors, fets and diodes device data.
Description npn silicon expitaxial planar transistor for general purpose, high voltage amplifier applications. General purpose amplifier high voltage application. Complementary low voltage transistor stmicroelectronics. The 2n5551 is an npn amplifier transistor with an amplification factor of 80 when the collector current is 10ma. Free packages are available maximum ratings rating symbol value unit collector.
Please consult the most recently issued document before initiating or completing a design. Datasheet identification product status definition advance information formative or in design this datasheet contains the design specifications for product development. Preliminary first production this datasheet contains preliminary data, and supplementary data will be published at a. Motorola, alldatasheet, datasheet, datasheet search site for electronic components and semiconductors, integrated circuits, diodes, triacs, and other semiconductors. Semtech, alldatasheet, datasheet, datasheet search site for electronic components and semiconductors, integrated circuits, diodes, triacs, and other semiconductors. Npn highvoltage transistor pmbt5551 data sheet status notes 1. It also has decent switching characteristics transition frequency is 100mhz hence can amplify lowlevel signals. Utc, alldatasheet, datasheet, datasheet search site for electronic components and semiconductors, integrated circuits, diodes, triacs, and other semiconductors. Amplifier transistors, 2n5551 datasheet, 2n5551 circuit, 2n5551 data sheet.
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